100 mm wafers
- diameter: 100 mm
- diameter tolerance: ±0.2 mm
- growth: CZ
- grade: prime
- type / dopant: P/Boron
- orientation: (100)±1°
- thickness tolerance: ±25 µm
- resistivity: 1-100 Ohm-cm
- ttv: < 10 µm
- bow: < 40 µm
- warp: < 40 µm
- flat: according to SEMI-Std. (32.5 mm)
- front side: polished
- back side: etched
150 mm wafers
- diameter: 150 mm
- diameter tolerance: ±0.2 mm
- growth: CZ
- grade: prime
- type / dopant: P/Boron
- orientation: (100)±0.5°
- thickness tolerance: ±25 µm
- resistivity: 1-100 Ohm-cm
- ttv: < 10 µm
- bow: < 40 µm
- warp: < 40 µm
- flat: according to SEMI-Std. (57.5 mm)
- front side: polished
- back side: etched
200 mm wafers
- diameter: 200 mm
- diameter tolerance: ±0.3 mm
- growth: CZ
- type / dopant: P/Boron
- orientation: (100)
- thickness tolerance: ±25 µm
- resistivity: 1-100 Ohm-cm
- ttv: < 10 µm
- tir: < 5 µm
- bow: < 30 µm
- warp: < 30 µm
- notch: according to SEMI
- front side: polished
- back side: etched
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