Additional information
| material | silicon |
|---|---|
| diameter | 200 mm |
| diameter tolerance | ± 0.3 mm |
| growth | CZ |
| grade | prime |
| type / dopant: | P/Boron |
| orientation: | (100) |
| resistivity | 1-100 Ohm-cm |
| thickness | 725 µm |
| thickness tolerance | ± 25 µm |
| ttv | < 10 µm |
| tir | < 5 µm |
| bow | < 30 µm |
| warp | < 30 µm |
| notch | according to SEMI |
| frontside | polished |
| backside | etched |
| marking | without laser marking |
