| thickness (μm) | article number |
|---|---|
| 200 | DSP-100×0200-B33-00 |
| 300 | DSP-100×0300-B33-00 |
| 400 | DSP-100×0400-B33-00 |
| 500 | DSP-100×0500-B33-00 |
| 600 | DSP-100×0600-B33-00 |
| 700 | DSP-100×0700-B33-00 |
| 1000 | DSP-100×1000-B33-00 |
Glass wafers made of borosilicate glass are often used in Semiconductor and MEMS industry in a wide variety of applications. These wafers can be used for the encapsulation of MEMS devices for example for sensors using Wafer-Level-Packaging (WLP) technology or as blank glass substrates for semiconductor processing and optics.
Wafer Universe stock products from borosilicate glass have a coefficient of thermal expansion (cte) that is adapted to silicon, which makes them the perfect substrate to use in anodic bonding. The glass features good transmission over a wide spectrum as well as high chemical resistance and mechanical strength. Furthermore, these wafers can be used in high temperature processing.
100 mm wafers
- material: BOROFLOAT33®
- diameter: 100.0 ± 0.3 mm
- cte: 3.25 ppm/K (adapted to Si)
- thickness tolerance: ± 10 μm
- edge exclusion: 6 mm
- polishing: double side polished
- bow: < 30 μm
- flat: SEMI (32.5 mm)
- surface roughness (Ra): < 1 nm
- ttv: < 10 μm
- scratch-dig: 60-40
- packaging: cleanroom packed
- packing units: 10 pcs, 25 pcs
- material data sheet
150 mm wafers
- material: BOROFLOAT33®
- diameter: 150.0 ± 0.3 mm
- cte: 3.25 ppm/K (adapted to Si)
- thickness tolerance: ± 10 μm
- edge exclusion: 6 mm
- polishing: double side polished
- bow: < 60 μm
- flat: SEMI (57.5 mm)
- surface roughness (Ra): < 1 nm
- ttv: < 10 μm
- scratch-dig: 60-40
- packaging: cleanroom packed
- packing units: 10 pcs, 25 pcs
- material data sheet
| thickness (μm) | article number |
|---|---|
| 200 | DSP-150×0200-B33-00 |
| 300 | DSP-150×0300-B33-00 |
| 400 | DSP-150×0400-B33-00 |
| 500 | DSP-150×0500-B33-00 |
| 600 | DSP-150×0600-B33-00 |
| 700 | DSP-150×0700-B33-00 |
| 1000 | DSP-150×1000-B33-00 |
200 mm wafers
- material: BOROFLOAT33®
- diameter: 200.0 ± 0.3 mm
- cte: 3.25 ppm/K (adapted to Si)
- thickness tolerance: ± 10 μm
- edge exclusion: 6 mm
- polishing: double side polished
- bow: < 80 μm
- notch: SEMI
- surface roughness (Ra): < 1 nm
- ttv: < 10 μm
- scratch-dig: 60-40
- packaging: cleanroom packed
- packing units: 10 pcs, 25 pcs
- material data sheet
| thickness (μm) | article number |
|---|---|
| 200 | DSP-200×0200-B33-00 |
| 300 | DSP-200×0300-B33-00 |
| 400 | DSP-200×0400-B33-00 |
| 500 | DSP-200×0500-B33-00 |
| 600 | DSP-200×0600-B33-00 |
| 700 | DSP-200×0700-B33-00 |
| 1000 | DSP-200×1000-B33-00 |
300 mm wafers
- material: BOROFLOAT33®
- diameter: 300.0 ± 0.3 mm
- cte: 3.25 ppm/K (adapted to Si)
- thickness tolerance: ± 10 μm
- edge exclusion: 6 mm
- polishing: double side polished
- bow: < 100 μm
- notch: SEMI
- surface roughness (Ra): < 1 nm
- ttv: < 10 μm
- scratch-dig: 60-40
- packaging: cleanroom packed
- packing units: 10 pcs, 25 pcs
- material data sheet
| thickness (μm) | article number |
|---|---|
| 400 | DSP-300×0400-B33-00 |
| 500 | DSP-300×0500-B33-00 |
| 700 | DSP-300×0700-B33-00 |
| 1000 | DSP-300×1000-B33-00 |
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